THERMOELECTRIC POWER GENERATION AND RELATED PHENOMENA

Abstract

Sound, single-phase, solid solutions of the pseudo-binary system GaAs-AlAs were prepared by zone-leveling and solute-buildup techniques. Study of this system has been confined largely to the low Al region. The thermoelectric power of n-type GaAs is increased and the thermal conductivity is decreased by alloying with AlAs. The room-temperature thermoelectric power in material with about 3 x 10 to the 18th power electrons/cc increased from 63.4 to 176.2 microvolts/deg C (0 to 22.3 mole-% AlAs), whereas the thermal conductivity decreased from 0.39 to 0.15 w/cm C. On the other hand, in all cases, alloying has resulted in rather high room-temperature resistivities. A description of both the theory and the apparatus design of the method for measuring thermal diffusivity is given. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 15, 1961
Accession Number
AD0265147

Entities

People

  • T.s. Shilliday

Organizations

  • Battelle Memorial Institute

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Conductivity
  • Demographic Cohorts
  • Diffusivity
  • Electrons
  • Leveling
  • Materials
  • Physical Properties
  • Solid Solutions
  • Thermal Conductivity
  • Thermal Diffusivity
  • Thermoelectric Power Generation

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene