SINGLE-CRYSTAL TUNGSTEN

Abstract

A technique and the apparatus for growing large (1 m long) single crystals of W are described. A single-crystal W wire is placed in WCl6 vapor, which partially decomposes into its components above 1000 C. The factors which influence a regular growth are: (1) the temperature of the growing wire; (2) the WCl6 pressure; (3) the pressure of the free Cl; and (4) the orientation of the crystal with respect to the wire. Singlecrystal W was much softer and more flexible than W prepared in the usual manner. An x-ray analysis showed that the single-crystal structure was destroyed by working, and with increasing deformation, the properties of the material approach those of ordinary tungsten.

Document Details

Document Type
Technical Report
Publication Date
Oct 11, 1961
Accession Number
AD0265274

Entities

People

  • A.e. Van Arkel

Organizations

  • Library of Congress

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Crystal Structure
  • Crystals
  • Engineered Materials
  • Materials
  • Orientation (Direction)
  • Single Crystals
  • Tungsten
  • X Rays

Readers

  • Materials Science and Engineering.
  • Surface Engineering/Surface Coating Technology.