SEMICONDUCTOR PHOTOVOLTAIC CONVERSION
Abstract
The diffusion of P into GaAs using high P vapor concentrations led to surface concentnations up to 3 x 10 to the 22nd power/cc and clear indications of GaP and GaP-GaAs alloys. The diffusion profile contained regions of increasing, and then decreasing diffusion coefficient. A Boltzmann-type temperature dependence is not found. The radiation resistance of GaAs cells for 800 kev electrons is roughly equivalent to n on p Si cells with the same initial efficiency. An analysis based on the spectral response indicates the comparable performance may be due to the low minority-carrier lifetimes in GaAs. The radiation resistance of n on p Si cells made from floating-zone and quartz-crucible material appear to be the same. The lowest electron energy at which a change in bulk conductivity was observed is 167 kev in n-type and approximately 220 kev in p-type Si. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1961
- Accession Number
- AD0265340
Entities
People
- J.a. Scott-monck
- J.j. Wysocki
Organizations
- Sarnoff Corporation