MOLECULAR CIRCUIT DEVELOPMENT
Abstract
Work on the properties of germanium films consisted of studying details of the deposition techniques. Studies of substrate materials, deposition temperatures, deposition times, and annealing temperatures were made. An examination was made of point contacts which represents the beginning of studies on individual microcrystals in the film. In addition to point contact studies, two other types of measurements were added to the program. These were the determination of the thermal band gap of semiconductor films and the study of reflection spectra of dielectric films. The increased effort in dielectric films resulted in a better understanding of the dielectric properties of thin films and the development of pinhole-free dielectric layers capable of operating to 500 C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1961
- Accession Number
- AD0265870
Entities
People
- C. Feldman
- S.m. Bryla
Organizations
- Melpar