HIGH-TEMPERATURE BROAD-BAND SEMICONDUCTORS
Abstract
Efforts were co tinued on the study and development of ne semiconductor materials for the direct conversion of heat to electricity in the temperature range above 800 K. Th major ork was on rare earth sulphid s with the Th3P4 deficiency s ruc ure. ( uthor)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 16, 1961
- Accession Number
- AD0266021
Entities
People
- P.h. Jr. Miller
Organizations
- New York University Tandon School of Engineering