SYNTHESIS AND PURIFICATION OF DIELECTRIC MATERIALS

Abstract

Synthesis and purification of inorganic dielectrics was studied to achieve better dielectric properties at high temperatures up to 500 C. The research was concentrated on boron nitride and aluminum oxide. Thin films of boron nitride and anodically formed alumnia have been developed with satisfactory dielectric properties at 500 C. Work on arc plasma jet sprayed inorganic films starting with high purity materials yielded films with inferior dielectric properties, indicating contamination from the arc electrodes. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1961
Accession Number
AD0266406

Entities

People

  • D.h. Hogle
  • W.c. Divens

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Ceramic Materials
  • Dielectric Properties
  • Dielectrics
  • Films
  • High Temperature
  • Materials
  • Plasma Jets
  • Thin Films

Readers

  • Plasma Physics.
  • Surface Engineering/Surface Coating Technology.