THEORETICAL AND EXPERIMENTAL STUDIES CONCERNING RADIATION DAMAGE IN SELECTED COMPOUND SEMICONDUCTORS

Abstract

ISOTHERMAL ANNEALING EXPERIMENTS ON NEUTRON-IRRADIATED N-TYPE GaAs were analyzed in terms of two independent monomolecular processes. Since a similar behavior was observed in electron-irradiated GaAs, direct comparisons were made between the two types of damage. Isochronal annealing studies on neutron-irradiated n-type InP indicate that this material may have a more complex direct structure than does GaAs when irradiated at or near room temperature. Opticaltransmission data obtained from neutron-irradiated GaAs, CdT E, AND CdS are discussed in terms of a model in which the damaged sites consist of localized regions of a different phase. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 15, 1961
Accession Number
AD0266456

Entities

People

  • E.m. Baroody
  • L.w. Aukerman

Organizations

  • Battelle Memorial Institute

Tags

DTIC Thesaurus Topics

  • Annealing
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Corpuscular Radiation
  • Electronics
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Fermions
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Ionizing Radiation
  • Materials
  • Radiation
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics