R-F AND I-F TRANSFORMERS, MINIATURIZED, FOR TRANSISTORS (WIDE BAND I-F AMPLIFIERS)
Abstract
A description is given of miniaturized lightweight inductive components and associated networks developed for use in wideband transistorized IF amplifiers which will provide highly stable characteristics over the temperature range of -65 to +200 C. Silicon transistors limit the upper temperature range to 130 C. Other components perform to 200 C. An investigation of the effects of the wide temperature ranges upon the transistorized circuits was conducted. A method of compensating the transistor gain-temperature characteristics was developed and tested. A wide range of agc control was successfully achieved with minimum effect upon the IF amplifier characteristics. Transistorized circuits for agc control with pulsed signals were developed. The mechanical design of each amplifier provides a small, rugged, lightweight package that may be hermetically sealed. The electrical design has provided simple alignment that will accommodate the normal spread in transistor parameters without modification. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1960
- Accession Number
- AD0267066
Entities
People
- Alfred Ossoff