INDUSTRIAL PREPAREDNESS MEASURE. 400 MC, 300 MW POWER TRANSISTOR
Abstract
Research was undertaken on the production engineering, fabrication and testing of a 400 mc 300 mw power transistor. The first samples have a 3-stripe geometry on an epitaxial PNP germanium Mesa structure. Design and process engineering efforts were concentrated upon meeting the required combination of frequency (400 mc) and output power (300 mw) at 10 db minimum power gain rating. From initial distributions of parameters it is apparent that many objective specifications can be met as initially specified, whereas some parameters (under present design) would probably have to be adjusted to permit meeting the 10 db minimum power gain spec. Power gain appears to be the ultimate parameter. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 23, 1961
- Accession Number
- AD0267233
Entities
People
- D.l. Grady
- John C. Howe
- Rodney H. Abshire
Organizations
- Motorola Mobility