STRUCTURAL IMPERFECTIONS IN SILICON P-N JUNCTIONS

Abstract

Four areas of investigation were completed. A study was made of a technique for measurement of the depth of diffused layers in silicon by a grooving method reported here in detail for the first time. An application is described of the anodic sectioning technique to the measurement of impurity distribution in thin diffused layers. The second area covers investigation of the structure of small angle grain boundaries in silicon and their effect on the diffusion of doping agents. Diffusion-induced slip in silicon appears to be caused by the diffusion of small substitutional atoms of the doping agent, such as boron, which create mechanical stresses within the heavily doped surface region of the silicon. This stress is apparently relieved by formation of dislocation arrays which become visible upon etching of the surface. A study was also made which was supported only in part under this contract covering impurity induced pipes through diffused layers in silicon. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1961
Accession Number
AD0267248

Entities

People

  • A. Goetzberger
  • H. Queisser

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Contracts
  • Coverings
  • Diffusion
  • Dislocations
  • Grain Boundaries
  • Grooving
  • Impurities
  • Measurement
  • P-N Junctions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology