Investigation of the Conduction Mechanism Insulating Solids
Abstract
Charge transport in insulating solids was studied. Fast pulse methods were used to study the drift mobility of generated carriers. The investigation of carrier mobility and charge transport in monoclinic Se crystals which consist of a lattice of puckered Se8 rings is reported. Work on CdS crystals is discussed. Experiments were carried out to investigate the effect of various electrode materials on the response to the fast excitation pulse. For the observation of carrier transits, the free carriers must be generated near a blocking electrode, but the opposite electrode should be injecting. Room temperature measurements carried out on specimens with Au (top) and In (bottom) electrodes led to an electron drift mobility of 280 sq cm/v sec. With decreasing temperature, electron drift mobility goes through a maximum and then decreases exponentially. Using crystals with exceptionally long hole life times it has been possible to measure the drift mobility of holes in CdS to be about 0.2 sq cm/v sec at room temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1961
- Accession Number
- AD0267977
Entities
Organizations
- University of Leicester