Production Engineering Measure on Silicon High Frequency Power Transistor
Abstract
Work was directed at improving the Vcesat of the 5 watt 10 mc transistor. The results showed that a transistor with a N doped collector of 3 ohm bulk resistivity and 2 mils thick would have a Vcesat less than the specified 1.7-v, with Ic = 500 ma and Ib = 200 ma. Some transistors were produced with a low Vcesat but the techniques involved in producing large numbers of these transistors with a high yield have not been mastered. Work was carried out on improving the emitter and base contacts with a resulting higher yield from these operations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1961
- Accession Number
- AD0268006
Entities
People
- David O'brien