A Note on Semiconductor Device Fabrication
Abstract
A discussion is presented of the basic steps in the making of germanium and Silicon junction devices. It includes a list of the common etchants with their relation to various phases of device fabrication. Consideration is given to alloying for junctions and ohmic contacts, as well as information on applying the dopant alloy. Electroless nickel or Au gold, furnace firing, and plating are examined in view of required modifications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1961
- Accession Number
- AD0268033
Entities
People
- I. Berman
Organizations
- Air Force Cambridge Research Laboratories