RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS
Abstract
Efforts were directed toward developing a large area front surface hot electron emitter of silicon. This work included the study of cesiumsilicon contacts, the diffusion of thin n-layers into silicon and the stripping of portions of the thin diffused n-type layer, and an attempt to observe hot electron emission from an emitter made by diffusion. In addition, an attempt was made to observe electron emission from cesium treated silicon by applying high voltage pulses across a crystal containing no junction. Theoretical calculations of the rate of energy loss of hot electrons in a metal are also reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1961
- Accession Number
- AD0268422
Entities
People
- E.k. Gatchell
- R.e. Simon
Organizations
- Sarnoff Corporation