HIGH POWER MICROWAVE ELECTRONICS
Abstract
Progress in the build-up of a high microwave power facility culminating in a 10 megawatt peak power C-band klystron system is reported. Details are given on the design considerations for a C-band peak power enhancement device (traveling wave resonator) capable of boosting high peak powers by a large factor and making it available for use with an external load. Approaches to the microwave switching problem are discussed and progress reported on work toward a suitable switch. Results are given for a prototype low-power X-band dischargeable resonator about 1000 wavelengths long from which enhanced pulsed power was extracted by means of a fast ferrite switch. Work is also described on the design of a test cell for subjecting materials to high power densities.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 02, 1961
- Accession Number
- AD0268733
Entities
People
- John W. Griemsmann
Organizations
- New York University Tandon School of Engineering