PREPARATION AND EVALUATION OF VACUUM-DEPOSITED THIN-FILM CAPACITORS,
Abstract
Results of statistical studies on the preparation and evaluation of thin-film capacitors are discussed. The dielectric material used was silicon monoxide (SiO). Data on the single-layer capacitors are presented with results are discussions of multilayered thin-film capacitors. Thin films of SiO were vacuum deposited in up tl seven stacked layers separated by aluminum film electrodes, onto supporting substrates of different surface characteristics. Parameters studied include thickness (interferometrically determined; ranges for a single dielectric film layer from 1,000 to 20,000 Angstroms), capacitance, dissipation factor, leakage current, insulation resistance, dielectric breakdown strength, temperature coefficient, probability distribution for studied parameters, and geometry dependence. Results demonstrate the feasibility of multilayering thin-film capacitors by vacuum deposition techniques in the order of the above thicknesses, and indicate potential application to the Signal Corps Micro-Module program. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1961
- Accession Number
- AD0268961
Entities
People
- Hans J. Degenhart
- Isaac H. Pratt
Organizations
- United States Army Communications-Electronics Command