HIGH TEMPERATURE SEMICONDUCTOR RESEARCH
Abstract
A study was made of the cause of explosions in the high pressure magnetic Czochralski apparatus for the growth of GaP. All explosions were ascribed to either a discharge from the R. F. coil, a mechanical failure of quartz members, or an overheating of the P reservoir. The stoichiometric melting point for GaP is 1467 + or -10 C at a dissociation pressure of 30 or -10 atm. The gas phase transport of GaAs with I2 was studied by measuring the optical absorption in the vapor; no free I2 is present in the system. The heat of reaction was 41 kcal/mole Ga1. A study was made of factors affecting the crystallinity of GaAs ingots grown in quartz boats; abrasive blasting the boat instead of etching with HF acid, reduces the wetting of the boat by the melt, and results in a markedly improved crystallinity. A Ga rich melt causes increased supercooling and poorer crystallinity. The higher the As pressure, the better is the crystallinity, except that above about 2 atm the crystals are excessively porous. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1961
- Accession Number
- AD0269292
Entities
Organizations
- Sarnoff Corporation