IMPACT IONIZATION IN ZINC-DOPED GERMANIUM AT LOW TEMPERATURES
Abstract
The behavior of variously compensated Zn-doped Ge samples in large electric fields was studied. By operating in the temperature range that corresponds to a partial freezing out of the charge carriers on the impurity centers, the impact ionization breakdown was observed successively on the 2 acceptor levels of Zn. The most compensated samples exhibited a negative resistance, observable in a wide range of temperatures (78 K to 14 K). The Hall mobility dependence versus the electric field was qualitatively explained by means of the hot c rriers approximation; a mechanism for negative resistance is generalized.A-269 9159N1 AD-269 916Div. 19 U (TISTW/RD) OTS price $9.60 Laboratory for Electronics, Inc., Boston, Mass. DOPPLER NAVIGATIONAL SYSTEM RADAR SET AN/APN- 116(XY-1) Final rept. 1962, 1v. incl. illus. tables (Rept. no. LFE no. C629) (Contract AF 33(600)40261) Unclassified report DESCRIPTORS: (*Doppler navigation, Doppler systems, *Doppler radar, Airborne, K band, Reliability, Life expectancy, *Radar navigation.) Identifiers: AN/APN-116, AN/APN-105. Contents: General system description K-band microwave development Specific circuit improvements Standardization Mechanical design achievements Reliability program and prediction
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1961
- Accession Number
- AD0269915
Entities
People
- A. Zylbersztejn
Organizations
- École Normale Supérieure