SEMICONDUCTOR RESISTIVE ELEMENT
Abstract
Research concerns the development of a semiconductor resistive lement of low temperatur coefficient of resistance comparable to metal film resistors. An valuation was made of state-ofthe-art semiconductor resistors, such as those incorporated in semiconductor network circuits. Diffused silicon layer el ments and pyrolytically deposited single and polycrystalline silicon elements were evaluated. Indications are that the characteristics of resistive elements can be improved by selection of proper impurity type and concen ration. (Au hor)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1961
- Accession Number
- AD0270011
Entities
Organizations
- Texas Instruments