MICROWAVE TUNNEL-DIODE OSCILLATORS
Abstract
Efforts were made to develop 4 different tunnel diode oscillators: (1) Tunable X-band oscillator, 100 microwatts, 9300 - 9500 mc: Alloyed junction diodes were fabricated but the series resistance and inductance were too high to permit operation in the frequency range. Additional diodes with improvements to reduce these parameters are being made. A package for point contact junction diodes was designed. (2) Tunable C-band oscillator, 3 milliwatts, 5340 - 5960 mc: Preliminary tests on low impedance circuits resulted in a power output of 0.4 mw at 4000 mc using a 40 ma gallium arsenide diode. Substantial reduction in series resistance and inductance of the diodes will be required to permit effective use of high current diodes to give the required power output. (3) Rapidly tunable Xband oscillator, 100 microwatts, 9500 - 9600 mc: This oscillator will use essentially the same diode and circuit developed for no. 1. (4) Wideband tunable oscillator 1 to 4 mw., 440 - 1110 mc: An oscillator incorporating a Magic Carpet tuner was designed and tested using a 50 ma germanium diode. A power output of 0.5 to 0.9 mw was obtained over a tuning range of 400 to 1175 mc. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1961
- Accession Number
- AD0270121
Entities
People
- Deborah J. Nelson
- F. Sterzer
- J. Napoleon