INDUSTRIAL PREPAREDNESS STUDY ON SILICON DIFFUSED JUNCTION TRANSISTORS NPN DEVICES 13, 14, 15 AND PNP DEVICES 13 AND 14, VOLUME I

Abstract

Manufacturing methods and processing techniques are presented for NPN and PNP versions of diffused junction type transistors designed for operation as follows: (1) device 13 NPN and PNP medium power dc-to-dc converter, inverter, chopper, voltage and current regulator, dc and servo amplifier, relay and solenoid-actuating circuits; (2) device 14 NPN and PNP intermediate power dc-to-dc converter, inverter, chopper, voltage and current-regulator, dc and servo amplifier, relay and solenoid-actuating circuits; and (3) device 15 NPN high power dc-to-dc converter, inverter, chopper, voltage and current regulator, dc and servo amplifier, relay and solenoidactuating circuits. The NPN structure is of the etched mesa type, the PNP structure is of the etched well type. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1961
Accession Number
AD0270133

Entities

People

  • F. Sawyer
  • L. Balents

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bipolar Junction Transistors
  • Converters
  • Current Regulators
  • Electronic Amplifier
  • Industrial Preparedness
  • Inverters
  • Medium Power
  • Power
  • Regulators
  • Solenoids
  • Transistors

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  • Aerospace Test and Evaluation
  • Integrated Circuit Design and Technology.