INDUSTRIAL PREPAREDNESS STUDY ON SILICON DIFFUSED JUNCTION TRANSISTORS NPN DEVICES 13, 14, 15 AND PNP DEVICES 13 AND 14, VOLUME II, BOOK 1

Abstract

Devices 13, 14, and 15 are discussed. Silicon power transistors were intended for a wide variety of applications in the temperature range -65 C to +175 C. They are particularly useful in power switching circuits, oscillator, regulator, and pulse amplifier circuits, and as class A and B push-pull audio and servo amplifiers. They feature extremely low saturation resistance, high current and power dissipation ratings, high beta at high current, and excellent high temperature performance up to +175 C. Detailed specifications and manufacturing processes used in the production of these transistors are described. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1961
Accession Number
AD0270134

Entities

People

  • F. Sawyer
  • L. Balents

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplifiers
  • Bipolar Junction Transistors
  • Circuits
  • Electronic Amplifier
  • High Temperature
  • Industrial Preparedness
  • Pulse Amplifiers
  • Switching
  • Switching Circuits
  • Transistors

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  • Semiconductor Device Technology
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