APPLICATIONS OF TUNNELING TO ACTIVE DIODES
Abstract
Further studies of the behavior of Cu in extrinsic GaAs were conducted. Theoretical expressions for the solubility of substitutional and interstitial Cu in n- and p-type material are compared with the observed solubility in p-type GaAs having various acceptor concentrations. From these data the solubility of interstitial Cu in intrinsic GaAs is deduced. This intrinsic solubility is found to be roughly 100 times smaller than that of substitutional Cu. The diffusion coefficient of interstitial Cu was measured and found to be independent of the acceptor concentration, and given by D = 0.03 exp (-0.52 ev/kT) sq cm/sec. Drift of interstitial Cu in an electric field over distances of 1/2 cm at 250 degrees C have been observed. Diffusion coefficients calculated from these experiments agree with the diffusion data under the assumption that the Cu drifts as a singly charged positive ion. GaP crystals having net donor concentrations of 4.5 x 10 to the 15th power/cc and room temperature mobilities of 300 sq cm/voltsec were grown from Ga solution. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 24, 1961
- Accession Number
- AD0270618
Entities
People
- R.n. Hall
Organizations
- General Electric