RECRYSTALLIZATION AND GRAIN GROWTH OF ALUMINUM

Abstract

The dislocation structure of cold-worked highpurity Al and the growth processes in recrystallization were studied by transmission electron microscopy and x-ray diffraction techniques. The dislocation structure of the asymmetrical low-angle boundaries is held responsible for the existence of a long-range stress field and the interconnection between mechanical and thermal stability of these boundaries is shown and related to the recrystallization mechanism. As grain growth proceeds the dislocation density decreases constantly, while the lattice misorientation within the grain increases. It is shown that this increase of misorientation is associated with defects incurred during the growth process and is not due to survivals of defects introduced during the deformation process. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1962
Accession Number
AD0271123

Entities

People

  • N. Hosokawa
  • S. Weissmann
  • T. Imura

Organizations

  • Rutgers University–New Brunswick

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Boundaries
  • Diffraction
  • Dislocations
  • Electron Microscopy
  • Grain Growth
  • Low Angles
  • Microscopy
  • Recrystallization
  • Thermal Stability
  • Transmission Electron Microscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene