REFLECTIVITY AND OPTICAL CONSTANTS OF INDIUM ARSENIDE, INDIUM ANTIMONIDE, AND GALLIUM ARSENIDE

Abstract

The reflectivities of InAs, InSb, and GaAs were measured between 0 and 6.0 ev, and the optical constants were computed from these data, using the dispersion relation between the phase and the magnitude of the reflectivity. Near 2.5 and 5.0 ev, reflectivity peaks appear, the lower maxima splitting into 2 smaller peaks whose separations are 0.35 ev, 0.50 ev, and 0.20 ev i b ) (Ultraviolet spectroscopy, Infrared spectroscopy, Spectro photometers, Photomultipliers.) the reflectivities of InAs, InSb, and GaAs were measured between 0 and 6.0 ev, and the optical constants were computed from these data, using the dispersion relation between the phase and the magnitude of the reflectivity. Near 2.5 and 5.0 ev, reflectivity peaks appear, the lower maxima splitting into 2 smaller peaks whose separations are 0.35 ev, 0.50 ev, and 0.20 ev, respectively, for the 3 materials. The imaginary part of the reciprocal of the dielectric constant, whose values at 6.0 ev are 1.0, 1.7, and 0.8, respectively, appears to have a maximum just beyond 6.0 ev. These values are uncertain because of the effect of extrapolating the reflectivity to energies above 6.0 ev. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1961
Accession Number
AD0271469

Entities

People

  • Robert E. Morrison

Organizations

  • Naval Ordnance Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Compound Semiconductors
  • Dielectric Permittivity
  • Dispersion Relations
  • Dispersions
  • Gallium Arsenides
  • Indium
  • Indium Antimonides
  • Infrared Spectroscopy
  • Materials
  • Reflectivity
  • Spectroscopy
  • Splitting
  • Ultraviolet Spectroscopy

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Nanofabrication and Microfabrication.
  • Quantum Chemistry

Technology Areas

  • Microelectronics