ETCHING OF HIGH PURITY ZINC

Abstract

An etching technique for revealing dislocations in high purity Zn single crystals without the addition of solute impurities was developed. The technique involves surface doping prior to chemical polishing. Evidence for a one to one correspondence between etch figures and dislocations is presented, together with some preliminary observations of slip on (0001) basal and (1212) pyramidal planes and twinning in Zn. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1961
Accession Number
AD0271586

Entities

People

  • K.h. Adams
  • R.c. Brandt
  • T. Jr. Vreeland

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Acquisition
  • Crystals
  • Data Acquisition
  • Diseases And Disorders
  • Dislocations
  • Impurities
  • Observation
  • Polishing
  • Single Crystals

Readers

  • Materials Science and Engineering.