INVESTIGATION AND DEVELOPMENT IN THE AREA OF EPITAXIAL GROWTH TECHNIQUES
Abstract
The study of the effect of growth conditions on surface and crystal perfection of epitaxial deposited layer was continued. The limit of layer thickness control was determined for both the single and multi-slice setups. The dependence of growth rate on the furnace geometry and gas flow pattern was demonstrated. Growth rate versus substrate orientation was investigated under one set of conditions. Control of layer resistivity was demonstrated in SiHCl3 system with P doped A and in a SiCl4 system with BBr3 doped SiCl4 by the mixed vapor technique. A diffusion technique for the determination of layer doping impurity gradient was developed. The effect of substrate orientation on pn junction parameters was investigated. Comparison was made of single and multiple sources in the growth system. Study of passivation techniques for epitaxial diffused devices was undertaken. Samples of pn planar diodes made by epi-oxide masking and diffusion were submitted. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1961
- Accession Number
- AD0271633
Entities
People
- Pingshan Wang
- R. Berkstresser
- V. Sils
Organizations
- Sylvania Electric Products