ON THE PRESSURE DEPENDENCE OF THE MOSSBAUER EFFECT
Abstract
The occurrence of recoilless radiation aroused widespread interest among solid state physicists because of the sharpness of the resonant lines and of their sensitive dependence upon both the immediate environment of the emitting nuclei and upon the lattice characteristics of the crystals in which they are located. A new relationship, namely the dependence of recoilless radiation upon the ambient pressure of a sample, is investigated and the conditions under which an observable effect is present are discussed. Also presented are brief discussions of some experiments in which this dependence may be further investigated and possibly utilized to advantage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1961
- Accession Number
- AD0272197
Entities
People
- Russel V. Hanks
Organizations
- Boeing