MOLECULAR CIRCUIT DEVELOPMENT
Abstract
Satisfactory results have been obtained on dielectric films and emphasis is being transferred to semiconductors and active devices. Consistent, pinhole-free, dielectric layers of SiO2 are now obtainable. Work on semiconductor films was largely confined to germanium and efforts resulted in obtaining vacuum-deposited films with field-effect properties approaching the pyrolytic film. This work provided a clue to the field effect in the films. A theoretical model for the field effects found in films became feasible. Studies of crystal structure and grain growth were continued. The phenomena of oriented polycrystals on amorphous substrates were also pursued. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1962
- Accession Number
- AD0272277
Entities
People
- Wilbur T. Layton
Organizations
- Melpar