DEVELOPMENT OF SILICON POWER TRANSISTORS

Abstract

Continued emphasis was placed on the importance of defining and solving the negative resistance phenomenon. A new device structure is suggested to minimize the negative resistance effect. Various pulse testing experiments were performed on silicon power transistors to determine the effects on the negative resistance. Efforts wereALSO MADE TO RESOLVE PROCESSING PROBLEMS AND TO IMPROVE THE YIELD OF DEVICES A and B. Diffusion, photoresist masking, metallizating, mounting, and bonding processes were evaluated and improved. State-of-the-art samples of device A were completed, and the electrical parameters of these devices are presented. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 10, 1961
Accession Number
AD0272295

Entities

People

  • J. O'brien

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Diffusion
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Resistance
  • Transistors

Readers

  • Electrical Engineering
  • Nanofabrication and Microfabrication.
  • Systems Analysis and Design