FAILURE MECHANISMS IN SILICON SEMICONDUCTORS

Abstract

Investigations of dislocations, small angle grain boundaries, twin boundaries, and stacking faults in Si were continued with the object of determining the influence of these defects upon reliability and failure of Si semiconductor devices. Enhanced grain boundary diffusion of Ga shows marked deviations from theory. SmallANGLE GRAIN BOUNDARIES IN Si yield photo-response with the polarity depending upon the thermal history of the sample. This is in contrast to results in Ge. Oxygen impurity atmospheres around the dislocations apparently determine the photoresponse and the conductivity type of the boundaries. Electrical and diffusion properties at coherent and incoherent twin boundaries may be understood from the crystallographic models of these boundaries. Stacking faults appear to originate preferentially at O contaminated surfaces when used as substrates for epitaxial growth. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1961
Accession Number
AD0272624

Entities

People

  • Hans J. Queisser

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Diffusion
  • Dislocations
  • Epitaxial Growth
  • Failure Mode And Effect Analysis
  • Grain Boundaries
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics