MICROWAVE SOLID-STATE DEVICES
Abstract
The results of experimental measurements relating to the performanc of diffused gallium arsenide varactor diodes are given. The values of zerobias cutoff frequency are found to be comparable with calculated values for the m asured structure. This fact is taken to indicate essentially n gligible contact resis anc . Th performance data are almost comparable to those obtained for point contact gallium arsenide varactor diodes. Some performa c ata for experimental diffused epitaxial gallium arsenide varactors is al o prese ted. he problem of reproducibility is briefly discussed, and has been te t tively ascribed to poor control of epitaxial film properties. A review of the performance of diffused epitaxial silicon diodes is also given. The noise figure and cutoff frequency data in icated are roughly compar ble to the data quoted for the diffused gallium arsenide diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1962
- Accession Number
- AD0272680
Entities
People
- J.c. Irvin
- J.h. Forster