RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS
Abstract
Progress is reported in the preparation and evaluation of large area hot electron emitters of silicon. Diffusion techniques were used to prepare p-n junction emitters with n-regions 500-1000 Angstroms thick. Surface conductance, luminescence, and electron emission were used to evaluate the devices. A correlation was observed between emission and luminescence. However, large emission currents were not observed because of the high electron affinity of these devices. Measurements were made which indicate that argon-bombardment may be useful for producing a favorable surface and for reducing the thickness of the surface n-region. Measurements of the sticking coefficient of cesium on tungsten are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1961
- Accession Number
- AD0272775
Entities
People
- E.k. Gatchell
- R.e. Simon
Organizations
- Sarnoff Corporation