PRODUCTION ENGINEERING MEASURE ON SILICON HIGH FREQUENCY POWER TRANSISTOR

Abstract

The failure to introduce back-diffusion into the process with a good yield led to a major change in the process. Work was carried out on the pull-back method of creating a N N junction in silicon which is described. Transistors made from this process have been successful in meeting the Vce sat in general. However as in the back-diffused units other parameters, especially Ico, have suffered. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1961
Accession Number
AD0272897

Entities

People

  • David O'brien

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Diffusion
  • Engineering
  • Frequency
  • Frequency Bands
  • Manufacturing Engineering
  • Production
  • Production Engineering
  • Production Management Methods
  • Productivity
  • Radio Frequency
  • Transistors

Fields of Study

  • Materials science

Readers

  • Aerospace Engineering
  • Integrated Circuit Design and Technology.
  • Psychometric Testing or Psychological Assessment.