INVESTIGATION OF MICROWAVE ARTIFICIAL DIELECTRICS WITH CONTROLLABLE INDEX OF REFRACTION
Abstract
The feasibility of photo-controlling an artificial dielectric consisting of semiconductor obstacles is considered. Investigations were performed in three major areas: developing an artificial dielectric made up from capacitance by large lossless obstacles, development and evaluation of photosensitive semiconductor obstacles, and the determination of the antenna type or types compatible with the optically controllable artificial dielectric. The susceptance of large rectangular metallic discontinuities is derived. Obstacles of this type were constructed and their measured susceptance compared favorably with the theoretical value over a wid range of frequencies. An artificial dielectric can be constructed with these obstacles and the range of refractive index obtainable. The properties of bulk photosensitive semiconductors are analyzed in terms of th ir effect on microwave fields and the physics of the material. Experimental measurements of the microwave characteristics of an obstacle using a photobiased semiconductor capacitive junction is presented. This latter method is a very effective means of controlling the obstacle susceptance. The controllable obstacles did not possess spherical symmetry and, as a result, an artificial dielectric consisting of a lattice of these obstacles will have anisotropic properties. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1962
- Accession Number
- AD0273066
Entities
Organizations
- General Electric