RESEARCH AND DEVELOPMENT FOR SURFACE PROTECTION FOR SILICON DEVICES
Abstract
Phenomena and mechanism of surface change were studied for the development of methods for surface protection of Si devices. Studies of high temperature aging of Si and Ge transistors encapsulated with adsorptive and reactive getters are discussed. BaO getter in O or N ambient seems to remove aging problems associated ith oxidation of Ag contacts, but appears to have no effect on kinetics of Al-Au compound formation. BaO plus HBO2 appears to stabilize Si transistor parameters through 300 C shelf storage. Materials for water vapor partial pressure control at different levels are li ted. Rates of oxidation of Si in O and in water vapor as a function of temperature are presented, with crystal face and doping level specified. Studies of dielectric properties of Ph silicate films prepared by accelerated oxidation, studies of accelerated oxidation below 600 C using evaporated Pb, and studies of accelerated oxidation of planar devices are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1961
- Accession Number
- AD0273138
Entities
People
- Henry W. Cooper
- Robert J. Jr. Gnaedinger
- Steward S. Flaschen
Organizations
- Motorola Mobility