500 C SILICON CARBIDE RECTIFIER PROGRAM
Abstract
A production study was initiated on 500 C silicon carbide rectifiers. Hexagonal silicon carbide crystals were grown in a Kroll-type furnace by the sublimation technique. To increase the yield of usable crystals for device fabrication, a new Kroll-type furnace was designed. The feasibility of vapor phase thermal decomposition methods was also investigated for the controlled growth of silicon carbide platelets and sheets. The initial effort emphasized the conditions for the preparation of crystals with a high degree of perfection. Aluminun-diffusion experiments were performed on small crystals. Diffused junctions of milliampere current capacity were made. The feasibility of epitaxially grown junctions by thermal decomposition was demonstrated. The methods of rectifier fabrication are being evaluated and revised to meet the needs of quantity production. It was found that the commercial metal-ceramic header presently in use cannot meet the requirements of vacuum tight operation for 1000 hrs at 500 C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1962
- Accession Number
- AD0273589
Entities
People
- H.c. Chang
- R.b. Campbell
Organizations
- Westinghouse Electric Corporation