PHOTOENGRAVING PROCEDURES FOR SILICON DEVICE FABRICATION

Abstract

Photoengraving procedures are especially adaptable to the fabrication of solid-state electronic devices from silicon because they provide a convenient method for using the naturally occurring oxide layer to control the areas into which impurities can be diffused. A precision printer has been devised to register the so-called stepand-repeat transparencies, used in the photoengraving process, with appropriate areas of the silicon surface. By means of this device and selective etchants, it is possible to remove the oxide layer or to make shallow or comparatively deep etches into silicon over small and accurately specified areas. Examples of the results achieved thereby are discussed as they relate to silicon device fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Feb 23, 1962
Accession Number
AD0273618

Entities

People

  • C.h. Klute
  • G.b. Wetzel

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Air Force Facilities
  • Chemistry
  • Chlorides
  • Electronic Components
  • Engineering
  • Fabrication
  • Guided Missiles
  • Materials
  • Military Research
  • Munitions
  • Nuclear Radiation
  • Ordnance Laboratories
  • Semiconductors
  • Solid State Electronics
  • Transistors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene