INVESTIGATION OF INTEGRALLY COMPOSED VARIABLE ENERGY GAP PHOTOVOLTAIC SOLAR ENERGY CONVERTER
Abstract
It is stated that the compound structure gallium phosphide-gallium arsenide, with intermediate thin transition regions, is produced by solid state diffusion of phosphorus into gallium-arsenide at phosphorus pressures in excess of 8 atmospheres. The diffusion-conversion rate of gallium phosphide formation is pressure- and temperature-sensitive, is initially more rapid by orders of magnitude than classic phosphorus diffusion, and is extremely nonlinear. Significant depth differences between the polished and unpolished side of the same wafer were observed. The diffusion rate of zinc into gallium phosphide content is significantly faster than in gallium arsenide, and is estimated greater by several orders of magnitude. The window effect of the higher band gap layer is valid, and demonstrated by spectral response data.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 10, 1962
- Accession Number
- AD0273807
Entities
People
- G. N. Webb
- K. E. Bean
- L. E. Stone