HIGH FREQUENCY TRANSISTOR STUDY
Abstract
A 1 gc, coaxially packaged, germanium PNP epitaxial mesa transistor was developed and its electrical properties were evaluated in the frequency range from 200 to 1500 mc. Transit-time mode oscillation was verified around 1. 5 gc in combination with a parametrically pumped down converter at a signal frequency of 750 mc. A coaxial mixer was constructed which will accommodate these coaxially packaged transistors. A stable conversion power gain of approximately 45 db at 750 mc signal and 2 mc intermediate frequency was obtained. The approximate noise figure of 15 db was calculated from a measured sensitivity of 2 microvolt and a ban width of 500 kc. The nonlinear elements in drift transistors, which can be used for frequency conversion, were treated theoretically and verified experimentally. A variable, nonlinear reactance available at the emitter-to-base terminal of a drift transistor was employed for reactive mixing in a parametrically excited mode.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 16, 1962
- Accession Number
- AD0274006
Entities
People
- Hans G. Dill
- R. Zuleeg
Organizations
- Hughes Aircraft Company