Investigation of Semiconducting Properties of II-VI Compounds
Abstract
Experiments with heavily Cu-doped CdS showed this material contains a second phase which can be readily observed and decorates crystalline imperfections. Consideration is given to the possible positions of the thermal acceptor levels for Cu, Ag, and Au in CdS with the objective of preparing p-type CdS without precipitates of a second phase. Hall effect measurements on n-type ZnSe and p-type ZnTe were made; the resulting mobility-temperature relationships were compared to theoretical estimates. The measurements yielded tentative positions for donor levels in ZnSe and acceptor levels in ZnTe. ZnTe-CdS heterojunctions were prepared with current-voltage characteristics indicative of p-i-n and p-n*-n type junction structure. Examination of cross-sections of such junctions revealed a layer which is presumably intrinsic or very weakly n- type. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1962
- Accession Number
- AD0274152
Entities
People
- H. H. Woodbury
- M. Aven
Organizations
- General Electric