RESEARCH AND DEVELOPMENT OF SEMICONDUCTOR PARAMETRIC AND TUNNEL DIODE MICROWAVE DEVICES
Abstract
Mathematical analysis.) Identifiers: Tunnel diodes. Contents: Parametric amplifiers; Single diode type using low frequency pumping, Cavity- type (coaxial-line distributed amplifier), Helix-type, and Millimeter wave generation by parametric method. Tunnel diode amplifiers; Characteristics, noise theory, semiconductor oscillators. Tunnel diode converters; Small pump theory, Coaxial line circuit for UHF down converter, S-band down converter, Lumped parameter circuit for UHF down converter, Method of optimization of noise factor, Large pump theory, and Millimeter wave tunnel diode down converter. Solid-state microwave devices; Negative-resistance transmission line amplifiers, and Two-port microwave devices. Germanium and GaSb tunnel diodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 1962
- Accession Number
- AD0274340
Entities
People
- G. Conrad
- K. K. Chang
Organizations
- Sarnoff Corporation