ELECTRONIC PROPERTIES OF SOME INTERMETALLIC COMPOUNDS
Abstract
Additional analysis of the data for the PbTe system shows that the disparity in energy gap values for PbTe as determined from optical and thermal measurements may be explained by generation of excess carriers due to defect generation AT ELEVATED TEMPERATURES. An analysis of activation processes involved points to Pb interstitials as the most likely defect present. BaSe and BaTe can be prepared by direct reaction of Ba with Se and Te. The binding energies of these compounds is high as evidenced by their high melting points and high resistivity at room temperature, indicating that both would have rather high energy gaps. On examination of the PbSe phase diagram by thermal analysis and metallographic techniques it was determined that: (1) the melting point of PbSe is 678.3 C, (2) a monotectic reaction occurs on the Se rich side of PbSe, but does not occur on the Pb rich side of PbSe. Measurements of electronic properties of PbSe indicated that: (1) stoichiometric PbSe does not melt at the maximum melting point but the maximum melting point occurs at a composition containing 0.009 at-% Se, and (2) the energy gap as determined from resistivity and Hall effect as a function of temperature is greater than that reported from optical measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1961
- Accession Number
- AD0274498
Entities
People
- D. Seidman
- Eric Miller
- I. Cardoff
- K. Komarik
Organizations
- New York University