RESEARCH INVESTIGATIONS IN THE PHYSICAL CHEMISTRY AND METALLURGY OF SEMICONDUCTING MATERIALS

Abstract

THE SYNTHESIS AND PURIFICATION STEPS YIELDED A B product with a very small Si content as the only impurity detectable by emission spectrographic analysis. The C content was reduced by employing a 500 C reaction step during the distillation of the BBr3. The C content could be further reduced to a value below the detection limits of the presently employed analysis technique by a selective oxidation reaction while the B is molten. A doping study produced n-type B doped with Si and n-type B doped with W. In each case the dopant required was greater than 4 x 10 to the 20th power atoms/cc. P-N junctions were produced by a meltback technique by diffusion. Junctions formed by diffusion were obtained by heating the B in the presence of MoO3 at a temperature of 800 C. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1962
Accession Number
AD0274516

Entities

People

  • J.t. Buford
  • K.e. Bean

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Biomedical And Dental Materials
  • Chemistry
  • Detection
  • Diffusion
  • Distillation
  • Emission
  • Engineering
  • Impurities
  • Materials
  • Materials Engineering
  • Materials Science
  • Metallurgy
  • Oxidation
  • P-N Junctions
  • Physical Chemistry

Fields of Study

  • Materials science

Readers

  • Organic Chemistry
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.