THE INFLUENCE OF POINT DEFECTS ON THE KINETICS OF DISSOLUTION OF SEMICONDUCTORS

Abstract

The kinetics of dissolution of semiconductors as a function of point defects introduced by varying the stoichiometry and/or by doping additions have been studied. Experiments on two ionic semiconductors, lead sulfide and zinc oxide, are described. Under conditions involving a relatively large change in the oxidation states of the constituents in the solid-liquid reaction, the kinetics have been shown to vary markedly with point defect concentration. Preliminary results of other investigations under this contract are also mentioned. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1952
Accession Number
AD0274848

Entities

People

  • George Simkovich
  • J. Bruce Jr. Wagner

Organizations

  • Yale University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Compounds
  • Compound Semiconductors
  • Contracts
  • Electronics
  • Kinetics
  • Oxidation
  • Oxides
  • Point Defects
  • Semiconductors
  • Solid State Electronics
  • Stoichiometry

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics