MOLECULAR CIRCUIT DEVELOPMENT

Abstract

The transfer of emphasis to semiconductors and active devices continued. Vacuum-deposited germanium films were successfully doped, n-type. Such films were used to construct a film diode. Improvement in masking and deposition techniques led to vacuum-deposited germanium films consistently showing a field-effect response approaching that of the pyrolytic films. Investigation of the field-effect response in tin oxide films produced encouraging results. Silicon films were vacuum deposited at intermediate temperatures (900 C - 1000 C). The pyrolytic deposition of silicon films was delayed because of the occurrence of side reactions. Work on the sputtering of intermetallic compound semiconductors was continued. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 15, 1962
Accession Number
AD0275283

Entities

People

  • Wilbur T. Layton

Organizations

  • Melpar

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Films
  • Germanium
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Intermetallic Compounds
  • Oxide Films
  • Oxides
  • Semiconductors
  • Side Reactions
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene