500 C SILICON CARBIDE RECTIFIER PROGRAM
Abstract
Hexagonal silicon carbide crystals were grown in a Kroll-type furnace by the subli ation technique. O OBTAIN GREATER CONTROL OVER THE GROWTH VARIABLES, A NEW FURNACE WAS DESIG ED AND ASSEMBLED. E XPERIMENTS CONTINUED CONCERNING THE CONTROLLED GROWTH OF SILICON C RBIDE ON SEEDS. The research on grown junction crystals emphasized th determinatio of co ditions for t e preparation of crystals (1) with a high degree of surface and internal perfection and (2) of sufficient size to carry the required current. Aluminum-diffusion experiments resulted in junctions with milliamper curren carrying capacity. Metho s and materials of device fabrication were stu ied and revised to meet the specification of vacuum tight operation for 1000 hours at 500 C. El ctrical characteristics are given for an exceptional encapsulated rectifier at 300, 400, and 500 C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1962
- Accession Number
- AD0275540
Entities
People
- H.c. Chang
- R.b. Campbell
Organizations
- Westinghouse Electric Corporation