ENGINEERING SERVICES ON TRANSISTORS
Abstract
Research continued on microwave germanium transistors and on integrated circuit devices. Expeimental and calculated performance data are given for a low power 3 Gc and 1 watt 1 gc transistor. A review of various approaches to integrated semiconductor circuits leads to the conclusion that most gains will be obtained through a flexible approach using multiple like devices on a common substrate and the common encapsulation of unlike devices on separate substrates. Some aging and reliability results are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1962
- Accession Number
- AD0275708
Entities
People
- G. A. Dodson
- R. E. Davis