THE TUNNEL DIODE: A NEW MICROWAVE DEVICE
Abstract
The heavily doped semiconductor diode (tunnel diode) exhibits a negative resistance characteristic over a small voltage range in the forwardbiased direction, typically of the order of several tenths of a volt. A brief history is given of the discovery of this negative resistance characteristic. The nature of the discovery, essentially the tunneling effect as predicted by the theories of quantum mechanics, is discussed. Also to be considered are the basic questions of frequency limitation of the tunnel diode and its relative merits as compared with the parameteric amplifier and the maser. The analysis includes the development of the equivalent circuit and demonstrates its use. The equivalent circuit shows not only the necessary R, L, and C components but also the sources of electrical noise. The negative resistance amplifier and the frequency converter are examined for gain, bandwidth, noise figure, and stability. Finally, some general notes are presented on both the amplifier and the frequency converter, and their applications. (Autthor)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1962
- Accession Number
- AD0275760
Entities
People
- L.e. Dickens
Organizations
- Johns Hopkins University