HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES
Abstract
Research concerns microwave phase-shifting techniques, excluding ferromagnetic and mechanical methods, recommendations for new phase-shifting techniques which provide improved electrical scanning, and development of models of a phase shifter utilizing these techniques. Two general phase-shifting techniques were investigated, both of which employ semiconductor elements. The first approach is the step or incremental phaseshifting device which provides for discrete changes in phase. The second phase-shifting approach is a continuously variable one which provides for a greater flexibility in phase control. Both the semiconductor material and the circuit problems involved in each of these two approaches have been further explored in some detail. Results indicate that both the desired phase-shifting characteristics as well as power-handling capabilities can be reached. Phase shifters were built for L-band which, for the incremental type, can handle peak powers in excess of 75 kw, and for the continuous type can handle 2 - 6 kw peak power. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1962
- Accession Number
- AD0275821
Entities
People
- Charles Howell
- Joseph White
Organizations
- M/A-COM Technology Solutions